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This article is cited in 6 scientific papers (total in 6 papers)
FROM GUEST EDITORIAL
High pressure photoluminescence studies of diamond with GeV centers
S. G. Lyapina, A. A. Razgulovab, A. P. Novikova, E. A. Ekimova, M. V. Kondrina a L. F. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow, Russia
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow, Russia
Abstract:
We report low temperature (80 K) photoluminescence studies of microcrystalline diamond with germanium-vacancy (GeV) centers under hydrostatic pressure up to 6 GPa. Powders of Ge-doped diamond crystals were synthesized from hydrocarbons at high-pressures and high-temperatures. Due to the high quality of the samples, we were able to resolve the distinct quadruplet structure of the zero-phonon line (ZPL) of the GeV center already at 80 K and to trace it up to $\sim$ 6 GPa. The pressure dependence of ZPL was found to be linear with the pressure coefficient $dE/dP$ = 3.1 meV/GPa, which is nearly 3 times higher than that for the isomorphic SiV$^-$ center. The experimentally observed pressure coefficients of GeV$^-$, NV$^-$ and NV$^0$ centers are compared with results of ab initio DFT calculations, using Quantum ESPRESSO software package.
Keywords:
diamond, colour centers, high pressure, DAC.
Received: 19.06.2017 Revised: 19.09.2017
Citation:
S. G. Lyapin, A. A. Razgulov, A. P. Novikov, E. A. Ekimov, M. V. Kondrin, “High pressure photoluminescence studies of diamond with GeV centers”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 67–69
Linking options:
https://www.mathnet.ru/eng/nano127 https://www.mathnet.ru/eng/nano/v9/i1/p67
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