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PHYSICS
Some features of the thermoelectric properties of the “metal-carbon film” junction
Rostyslav V. Shalayev, Anatoliy I. Izotov, Vladimir V. Syrotkin Galkin Donetsk Institute for Physics and Engineering, Donetsk, Russia
Abstract:
Carbon films were obtained by magnetron sputtering of graphite in an argon atmosphere on various metal substrates. As a result, a “metal-semiconductor” junction is formed due to the fact that the temperature dependence of the film resistance is of a semiconductor nature. The current-voltage characteristics of the junction were studied at various ambient temperatures, and the degradation of its electrical properties over time was discovered.
Keywords:
carbon films, metal-semiconductor contact, thermoelectric properties.
Received: 20.03.2024 Revised: 22.03.2024 Accepted: 24.03.2024
Citation:
Rostyslav V. Shalayev, Anatoliy I. Izotov, Vladimir V. Syrotkin, “Some features of the thermoelectric properties of the “metal-carbon film” junction”, Nanosystems: Physics, Chemistry, Mathematics, 15:2 (2024), 201–203
Linking options:
https://www.mathnet.ru/eng/nano1262 https://www.mathnet.ru/eng/nano/v15/i2/p201
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