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PHYSICS
Transport properties of GaAs Co-doped H-passivated low-buckled and high-buckled zigzag silicene nanoribbon two probe devices
Asma N. Naqashab, Khurshed A. Shahac, Javid Ahmad Sheikhb, Brijesh Kumbhanid, Syed Muzaffar Ali Andrabie a Department of Nanotechnology, University of Kashmir, Srinagar, Jammu and Kashmir – 190006, India
b Department of Electronics and Instrumentation Technology, University of Kashmir, Srinagar, Jammu and Kashmir – 190006, India
c Postgraduate Department of Physics, S. P. College, Cluster University Srinagar, Jammu and Kashmir – 190001, India
d Department of Electrical Engineering, Indian Institute of Technology Ropar, Punjab – 140001, India
e Department of Applied Sciences, Institute of Technology, Zakura Campus, University of Kashmir, Srinagar, Jammu and Kashmir – 190006, India
Abstract:
In this study, we have investigated the transport properties of low bucked (LB) and high buckled (HB) silicene based two probe devices such as I–V characteristics, conductance, transmission spectrum and projected device density of states. Firstly, we have opened a bandgap in both LB and HB zigzag silicene nanoribbon (ZSiNR) by hydrogen passivation and simulated for their transport properties. Further, we have doped the LB and HB ZSiNR structures by gallium (Ga) and arsenide (As) atoms in order to determine their changes in the transport properties. The results show that 4 atom width silicene nanoribbon shows a maximum band gap of 2.76 and 2.72 $\mathring{\mathrm{A}}$ for LB-ZSiNR and HB-ZSiNR, respectively. The 2 atom doped ZSiNR shows good transport characteristics in the voltage range of 0.5 to 1.5 V in comparison with 4 and 6 atom doped models. The obtained results were validated by calculating the transmission spectrum and projected device density of states. It is believed that the modelled devices will find number of futuristic applications in the electronic industry.
Keywords:
zigzag silicene nanoribbons, DFT, I–V characteristics, transmission spectra, PDDoS.
Received: 12.06.2023 Revised: 18.08.2023 Accepted: 19.08.2023
Citation:
Asma N. Naqash, Khurshed A. Shah, Javid Ahmad Sheikh, Brijesh Kumbhani, Syed Muzaffar Ali Andrabi, “Transport properties of GaAs Co-doped H-passivated low-buckled and high-buckled zigzag silicene nanoribbon two probe devices”, Nanosystems: Physics, Chemistry, Mathematics, 14:4 (2023), 438–446
Linking options:
https://www.mathnet.ru/eng/nano1209 https://www.mathnet.ru/eng/nano/v14/i4/p438
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Abstract page: | 88 | Full-text PDF : | 40 |
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