Abstract:
The processes of charge transfer in semiconductors are considered. The model is constructed on the basis of quantum kinetic equations for the distribution functions of conduction electrons and holes of the valence band in the phase space of coordinates and quasimomenta. Scattering of charge carriers is modeled by the statistical particle method. The basic processes of electron scattering by lattice nonidealities are considered. The calculations of the electron drift velocity in pure and doped silicon are presented.
Citation:
A. V. Berezin, Yu. A. Volkov, M. B. Markov, I. A. Tarakanov, “The simulation of the electron-phonon interaction in silicon”, Mat. Model., 30:12 (2018), 3–16; Math. Models Comput. Simul., 11:4 (2019), 542–550
This publication is cited in the following 3 articles:
Yu. A. Volkov, M. B. Markov, I. A. Tarakanov, “Statistical particle in cell for solving the phonon Boltzmann equation”, Keldysh Institute preprints, 2022, 96–16
Yu. A. Volkov, A. S. Dmitriev, M. B. Markov, “Vlasov equation for phonons and its macroscopic consequences”, Math. Models Comput. Simul., 13:4 (2021), 552–560
Yu. A. Volkov, M. B. Markov, “The Vlasov approximation for phonon gas”, Keldysh Institute preprints, 2019, 83–15