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Matematicheskoe modelirovanie, 2016, Volume 28, Number 11, Pages 55–63 (Mi mm3786)  

This article is cited in 16 scientific papers (total in 16 papers)

Analytical approximation of the Fermi–Dirac integrals of half-integer and integer orders

O. N. Korolevaab, A. V. Mazhukinab, V. I. Mazhukinab, P. V. Breslavskiya

a Keldysh Institute of Applied Mathematics RAS, Moscow
b National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow
References:
Abstract: We obtain continuous analytical expressions approximating the Fermi–Dirac integrals of orders j=1/2,1/2,1,3/2,2,5/2,3,7/2 in a convenient form for calculation with reasonable accuracy (1÷4)% in a wide range of the degeneration in this paper. An approach based on the least square method for approximation was used. The demands to the approximation of integrals, to the range of variation of order j and to the definitional domain are considered in terms of the use of Fermi–Dirac integrals to determine the properties of metals and semiconductors.
Keywords: Fermi–Dirac integrals, analytical approximation.
Funding agency Grant number
Russian Science Foundation 15-11-00032
Received: 28.03.2016
English version:
Mathematical Models and Computer Simulations, 2017, Volume 9, Issue 3, Pages 383–389
DOI: https://doi.org/10.1134/S2070048217030073
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. N. Koroleva, A. V. Mazhukin, V. I. Mazhukin, P. V. Breslavskiy, “Analytical approximation of the Fermi–Dirac integrals of half-integer and integer orders”, Mat. Model., 28:11 (2016), 55–63; Math. Models Comput. Simul., 9:3 (2017), 383–389
Citation in format AMSBIB
\Bibitem{KorMazMaz16}
\by O.~N.~Koroleva, A.~V.~Mazhukin, V.~I.~Mazhukin, P.~V.~Breslavskiy
\paper Analytical approximation of the Fermi--Dirac integrals of half-integer and integer orders
\jour Mat. Model.
\yr 2016
\vol 28
\issue 11
\pages 55--63
\mathnet{http://mi.mathnet.ru/mm3786}
\elib{https://elibrary.ru/item.asp?id=28119125}
\transl
\jour Math. Models Comput. Simul.
\yr 2017
\vol 9
\issue 3
\pages 383--389
\crossref{https://doi.org/10.1134/S2070048217030073}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85020162180}
Linking options:
  • https://www.mathnet.ru/eng/mm3786
  • https://www.mathnet.ru/eng/mm/v28/i11/p55
  • This publication is cited in the following 16 articles:
    1. Bahtiyar A. Mamedov, Duru Özgül, “Accurate analytical evaluation of the generalized logarithmic and double Fermi–Dirac and Bose–Einstein functions”, Contrib. Plasma Phys, 2024  crossref
    2. Gulyamov G., Davlatov A.B., Juraev Kh.N., “Concentration, Thermodynamic Density of States, and Entropy of Electrons in Semiconductor Nanowires”, Low Temp. Phys., 48:2 (2022), 148–156  crossref  adsnasa  isi
    3. K. Vanlalawmpuia, Suman Kr Mitra, Brinda Bhowmick, “An analytical drain current model of Germanium source vertical tunnel field effect transistor”, Micro and Nanostructures, 165 (2022), 207197  crossref
    4. Zh. Yan, G. Gou, J. Ren, F. Wu, Ya. Shen, H. Tian, Y. Yang, T.-L. Ren, “Ambipolar transport compact models for two-dimensional materials based field-effect transistors”, Tsinghua Sci. Technol., 26:5 (2021), 574–591  crossref  isi
    5. A. Ueda, Y. Zhang, N. Sano, H. Imamura, Y. Iwasa, “Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide ransistors”, npj Comput. Mater., 6:1 (2020), 24  crossref  adsnasa  isi  scopus
    6. J. P. Selvaggi, J. A. Selvaggi, “The application of real convolution for analytically evaluating Fermi-Dirac-type and Bose–Einstein-type integrals”, J. Complex Anal., 2018, 5941485  crossref  mathscinet  zmath  isi  scopus
    7. A. AlQurashi, C. R. Selvakumar, “A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices”, Superlattices Microstruct., 118 (2018), 308–318  crossref  adsnasa  isi  scopus
    8. V. M. Chetverikov, “The spatial distribution of magnetization in a ferromagnetic semiconductor thin film”, Mosc. Univ. Phys. Bull., 73:6 (2018), 592–598  crossref  mathscinet  adsnasa  isi  scopus
    9. F. Lanzini, H. O. Di Rocco, “An implementation of the average atom model using the thermodynamic consistency condition: application to Ar”, Acta Phys. Pol. A, 134:6 (2018), 1126–1133  crossref  adsnasa  isi  scopus
    10. O. N. Koroleva, A. V. Mazhukin, “Thermophysical characteristics of an electron gas of silicon in the region of phase transformations”, Keldysh Institute preprints, 2018, 73–27  mathnet  mathnet  crossref
    11. N. N. Kalitkin, S. A. Kolganov, “Calculation of the Fermi–Dirac functions with exponentially convergent quadratures”, Math. Models Comput. Simul., 10:4 (2018), 472–482  mathnet  crossref  elib
    12. O. N. Koroleva, A. V. Mazhukin, “Determination of thermal conductivity and heat capacity of silicon electron gas”, Math. Montisnigri, 40 (2017), 99–109  zmath  isi
    13. O. N. Koroleva, V. I. Mazhukin, A. V. Mazhukin, “Calculation of silicon band gap by means of Fermi-Dirac integrals”, Math. Montisnigri, 38 (2017), 49–62  zmath  isi
    14. O. N. Koroleva, A. V. Mazhukin, “Determination of transport properties of silicon electron gas”, Math. Montisnigri, 39 (2017), 57–66  isi
    15. A. V. Mazhukin, O. N. Koroleva, V. I. Mazhukin, A. V. Shapranov, “Continual and molecular dynamics approaches in determining thermal properties of silicon”, Third International Conference on Applications of Optics and Photonics, Proceedings of SPIE, 10453, ed. M. Costa, SPIE-Int. Soc. Optical Engineering, 2017, UNSP 104530Y  crossref  isi  scopus
    16. Mazhukin V.I., Koroleva O.N., Mazhukin A.V., Aleshchenko Yu.A., “Effect of Degenerate Carriers on Si Band Gap Narrowing”, Bull. Lebedev Phys. Inst., 44:7 (2017), 198–201  crossref  adsnasa  isi  elib
    Citing articles in Google Scholar: Russian citations, English citations
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