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This article is cited in 2 scientific papers (total in 2 papers)
Analytic-numerial method for computation of interaction of physical fields in semiconductor diode
S. I. Bezrodnykhab, V. I. Vlasova a Dorodnicyn Computing Centre of RAS, Federal Research Center "Computer Science and Control" of Russian Academy of Sciences
b Sternberg Astronomical Institute, Lomonosov Moscow State University
Abstract:
The paper suggests an analytic-numerical method for solving a singularly perturbed nonlinear system of differential equations, which models interaction of physical fields in semiconductor diode. Interaction of electric field and densities of holes and electrons is considered in drift-diffusion approximation and recombination function is taken in the form, proposed by Shockley, Read and Hall. The method was realized and wide numerical experiments approved superexponential convergence rate of the method.
Keywords:
modeling of physical fields in semiconductor devices, singularly perturbed systems, analytic-numerical methods, functional Newton’s method, WKB approximation.
Received: 30.03.2015
Citation:
S. I. Bezrodnykh, V. I. Vlasov, “Analytic-numerial method for computation of interaction of physical fields in semiconductor diode”, Mat. Model., 27:7 (2015), 15–24
Linking options:
https://www.mathnet.ru/eng/mm3617 https://www.mathnet.ru/eng/mm/v27/i7/p15
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Abstract page: | 458 | Full-text PDF : | 180 | References: | 62 | First page: | 11 |
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