Analytic-numerial method for computation of interaction of physical fields in semiconductor diode

The paper suggests an analytic-numerical method for solving a singularly perturbed nonlinear system of differential equations, which models interaction of physical fields in semiconductor diode. Interaction of electric field and densities of holes and electrons is considered in drift-diffusion approximation and recombination function is taken in the form, proposed by Shockley, Read and Hall. The method was realized and wide numerical experiments approved superexponential convergence rate of the method.