Mathematical modeling of memristor in the presence of noise

The paper is devoted to the modeling of memristor in the presence of noise. A short review of existing models is given. A stochastic model of memristor, which allows investigating its behavior in the presence of noise, is proposed. The results of numerical simulation of a memristor circuit under the influence of sinusoidal signal and noise are given. It is shown that for certain values of model parameters, the phenomenon of stochastic resonance occurs which lead to the appearance of memristive properties, not detected in the absence of noise.