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Matematicheskoe modelirovanie, 2010, Volume 22, Number 9, Pages 79–94 (Mi mm3019)  
This article is cited in 3 scientific papers (total in 3 papers)

On calculation of the electric potential for 2D silicon transistor with a silicon oxide nanochannel

A. M. Blokhinab, A. S. Ibragimovab

a Sobolev Institute of Mathematics SB RAS
b Novosibirsk State University
Full-text PDF (658 kB) Citations (3)
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Abstract: We study the problem on calculation of the electric potential for the 2D silicon transistor occupying a domain Ω with an adjoint silicon oxide nanochannel occupying a domain ΩG. By numerical simulations we justify the reduction of this problem in the domain Ω∪ΩG to that for finding the potential only in the domain Ω.
Keywords: hydrodynamical model, the Poisson equation, metal oxide semiconductor field effect transistor, the parabolic regularization, longitudinal-transverse sweep method.
Received: 16.12.2009
English version:
Mathematical Models and Computer Simulations, 2011, Volume 3, Issue 2, Pages 245–256
DOI: https://doi.org/10.1134/S2070048211020025
Bibliographic databases:
Document Type: Article
UDC: 519.615.5+621.382.2
Language: Russian
Citation: A. M. Blokhin, A. S. Ibragimova, “On calculation of the electric potential for 2D silicon transistor with a silicon oxide nanochannel”, Mat. Model., 22:9 (2010), 79–94; Math. Models Comput. Simul., 3:2 (2011), 245–256
Citation in format AMSBIB
\Bibitem{BloIbr10}
\by A.~M.~Blokhin, A.~S.~Ibragimova
\paper On calculation of the electric potential for 2D silicon transistor with a silicon oxide nanochannel
\jour Mat. Model.
\yr 2010
\vol 22
\issue 9
\pages 79--94
\mathnet{http://mi.mathnet.ru/mm3019}
\mathscinet{http://mathscinet.ams.org/mathscinet-getitem?mr=2767923}
\transl
\jour Math. Models Comput. Simul.
\yr 2011
\vol 3
\issue 2
\pages 245--256
\crossref{https://doi.org/10.1134/S2070048211020025}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84929079730}
Linking options:
  • https://www.mathnet.ru/eng/mm3019
  • https://www.mathnet.ru/eng/mm/v22/i9/p79
    • This publication is cited in the following 3 articles:
    1. Blokhin A., Semisalov B., “A New Approach to Numerical Simulation of Charge Transport in Double Gate-Mosfet”, Appl. Math. Comput., 342 (2019), 206–223  crossref  isi
    2. A. M. Blokhin, B. V. Semisalov, “Chislennoe reshenie zadachi o perenose zaryada v tranzistore DG-MOSFET”, Matem. modelirovanie, 26:8 (2014), 126–148  mathnet
    3. A. M. Blokhin, B. V. Semisalov, “On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor”, Comput. Math. Math. Phys., 53:6 (2013), 798–822  mathnet  crossref  crossref  mathscinet  isi  elib  elib
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Математическое моделирование
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    References:59
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