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This article is cited in 3 scientific papers (total in 3 papers)
On calculation of the electric potential for 2D silicon transistor with a silicon oxide nanochannel
A. M. Blokhinab, A. S. Ibragimovab a Sobolev Institute of Mathematics SB RAS
b Novosibirsk State University
Abstract:
We study the problem on calculation of the electric potential for the 2D silicon transistor occupying a domain $\Omega$ with an adjoint silicon oxide nanochannel occupying a domain $\Omega_G$. By numerical simulations we justify the reduction of this problem in the domain $\Omega\cup\Omega_G$ to that for finding the potential only in the domain $\Omega$.
Keywords:
hydrodynamical model, the Poisson equation, metal oxide semiconductor field effect transistor, the parabolic regularization, longitudinal-transverse sweep method.
Received: 16.12.2009
Citation:
A. M. Blokhin, A. S. Ibragimova, “On calculation of the electric potential for 2D silicon transistor with a silicon oxide nanochannel”, Matem. Mod., 22:9 (2010), 79–94; Math. Models Comput. Simul., 3:2 (2011), 245–256
Linking options:
https://www.mathnet.ru/eng/mm3019 https://www.mathnet.ru/eng/mm/v22/i9/p79
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