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Matematicheskoe modelirovanie, 1990, Volume 2, Number 11, Pages 3–9 (Mi mm2476)  
Computer experiment in science and engineering

Simulation of nonsteady state carrier transport in baritt diode

G. P. Pavlov

Gor'kii State University
Full-text PDF (830 kB)
Abstract: The numerical simulation of BARITT diode has been carried out by using quasihydrodynamical approximation. AC characteristics were calculated in nonlinear case. Power and efficiency limitations were determined as function of size and doping profile of semiconductor structure.
Received: 06.04.1990
Bibliographic databases:
UDC: 621.382
Language: Russian
Citation: G. P. Pavlov, “Simulation of nonsteady state carrier transport in baritt diode”, Matem. Mod., 2:11 (1990), 3–9
Citation in format AMSBIB
\Bibitem{Pav90}
\by G.~P.~Pavlov
\paper Simulation of nonsteady state carrier transport in baritt diode
\jour Matem. Mod.
\yr 1990
\vol 2
\issue 11
\pages 3--9
\mathnet{http://mi.mathnet.ru/mm2476}
\zmath{https://zbmath.org/?q=an:0972.78528}
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