Matematicheskoe modelirovanie
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Matem. Mod.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Matematicheskoe modelirovanie, 1990, Volume 2, Number 11, Pages 3–9 (Mi mm2476)  
Computer experiment in science and engineering

Simulation of nonsteady state carrier transport in baritt diode

G. P. Pavlov

Gor'kii State University
Full-text PDF (830 kB)
Abstract: The numerical simulation of BARITT diode has been carried out by using quasihydrodynamical approximation. AC characteristics were calculated in nonlinear case. Power and efficiency limitations were determined as function of size and doping profile of semiconductor structure.
Received: 06.04.1990
Bibliographic databases:
UDC: 621.382
Language: Russian
Citation: G. P. Pavlov, “Simulation of nonsteady state carrier transport in baritt diode”, Matem. Mod., 2:11 (1990), 3–9
Citation in format AMSBIB
\Bibitem{Pav90}
\by G.~P.~Pavlov
\paper Simulation of nonsteady state carrier transport in baritt diode
\jour Matem. Mod.
\yr 1990
\vol 2
\issue 11
\pages 3--9
\mathnet{http://mi.mathnet.ru/mm2476}
\zmath{https://zbmath.org/?q=an:0972.78528}
Linking options:
  • https://www.mathnet.ru/eng/mm2476
  • https://www.mathnet.ru/eng/mm/v2/i11/p3
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Математическое моделирование
    Statistics & downloads:
    Abstract page:327
    Full-text PDF :139
    References:1
    First page:1
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024