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Matematicheskoe modelirovanie, 1990, Volume 2, Number 7, Pages 28–37 (Mi mm2409)  
Computer experiment in science and engineering

3-D modelling of transient processes in elements of integrated circuits

A. I. Adamsone, B. S. Polskii

University of Latvia
Full-text PDF (1024 kB)
Abstract: Half-implicit absolutely stable method for calculation of transient processes in elements of integrated circuits in threedimensional geometry is proposed. Modelling of transient processes in bipolar transistor was performed and comparison of 2-D and 3-D results was made.
Received: 25.01.1990
Bibliographic databases:
UDC: 621.382
Language: Russian
Citation: A. I. Adamsone, B. S. Polskii, “3-D modelling of transient processes in elements of integrated circuits”, Matem. Mod., 2:7 (1990), 28–37
Citation in format AMSBIB
\Bibitem{AdaPol90}
\by A.~I.~Adamsone, B.~S.~Polskii
\paper 3-D modelling of transient processes in elements of integrated circuits
\jour Matem. Mod.
\yr 1990
\vol 2
\issue 7
\pages 28--37
\mathnet{http://mi.mathnet.ru/mm2409}
\zmath{https://zbmath.org/?q=an:0993.78512}
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  • https://www.mathnet.ru/eng/mm2409
  • https://www.mathnet.ru/eng/mm/v2/i7/p28
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    		Математическое моделирование
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