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Matematicheskoe modelirovanie, 1992, Volume 4, Number 11, Pages 101–109 (Mi mm2131)  
Mathematical models and computer experiment

The model of MBE growth of nonideal III–V compound crystal

N. V. Peskov

M. V. Lomonosov Moscow State University
Full-text PDF (1056 kB)
Abstract: The computer model of MBE growth of III–V semiconductor compounds is described. The model, in contrast with a traditional model “solid-on solid”, allows the creation of bulk vacancies. The results of computational experiment on growth of crystal at low temperature for different values of flux intensity of group V elements are presented.
Received: 11.11.1991
Language: Russian
Citation: N. V. Peskov, “The model of MBE growth of nonideal III–V compound crystal”, Matem. Mod., 4:11 (1992), 101–109
Citation in format AMSBIB
\Bibitem{Pes92}
\by N.~V.~Peskov
\paper The model of MBE growth of nonideal III--V compound crystal
\jour Matem. Mod.
\yr 1992
\vol 4
\issue 11
\pages 101--109
\mathnet{http://mi.mathnet.ru/mm2131}
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