|
Matematicheskoe modelirovanie, 1992, Volume 4, Number 2, Pages 15–20
(Mi mm2040)
|
|
|
|
Mathematical models and computer experiment
Modelling of the kinetics of gas-phase reactions during silicon precipitation
A. F. Stekolnikov, O. M. Ivanov, A. E. Pereversev, D. V. Feschenko Minsk Institute of Radio Technology
Abstract:
A scheme of gas-phase reactions of the silane decomposition is' suggested. The kinetics of the silane decomposition and the reaption products accumulation is computed. The results show that the charged particles (ions and ions-radicals) do not actually influence on the silane rate decomposition and the composition of products. In the main, the silane decomposition proceeds via the radical mechanism where the principal role belongs to $\mathrm{SiH}_3$ and $\mathrm{SiH}_2$ radicals.
Received: 18.07.1991
Citation:
A. F. Stekolnikov, O. M. Ivanov, A. E. Pereversev, D. V. Feschenko, “Modelling of the kinetics of gas-phase reactions during silicon precipitation”, Matem. Mod., 4:2 (1992), 15–20
Linking options:
https://www.mathnet.ru/eng/mm2040 https://www.mathnet.ru/eng/mm/v4/i2/p15
|
Statistics & downloads: |
Abstract page: | 315 | Full-text PDF : | 117 | First page: | 1 |
|