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Matematicheskoe modelirovanie, 1992, Volume 4, Number 2, Pages 15–20 (Mi mm2040)  

Mathematical models and computer experiment

Modelling of the kinetics of gas-phase reactions during silicon precipitation

A. F. Stekolnikov, O. M. Ivanov, A. E. Pereversev, D. V. Feschenko

Minsk Institute of Radio Technology
Abstract: A scheme of gas-phase reactions of the silane decomposition is' suggested. The kinetics of the silane decomposition and the reaption products accumulation is computed. The results show that the charged particles (ions and ions-radicals) do not actually influence on the silane rate decomposition and the composition of products. In the main, the silane decomposition proceeds via the radical mechanism where the principal role belongs to $\mathrm{SiH}_3$ and $\mathrm{SiH}_2$ radicals.
Received: 18.07.1991
Language: Russian
Citation: A. F. Stekolnikov, O. M. Ivanov, A. E. Pereversev, D. V. Feschenko, “Modelling of the kinetics of gas-phase reactions during silicon precipitation”, Matem. Mod., 4:2 (1992), 15–20
Citation in format AMSBIB
\Bibitem{SteIvaPer92}
\by A.~F.~Stekolnikov, O.~M.~Ivanov, A.~E.~Pereversev, D.~V.~Feschenko
\paper Modelling of the kinetics of gas-phase reactions during silicon precipitation
\jour Matem. Mod.
\yr 1992
\vol 4
\issue 2
\pages 15--20
\mathnet{http://mi.mathnet.ru/mm2040}
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    Математическое моделирование
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