Efficient algorithm of the calculation of diffusion in silison during lokal oxidation

A mathematical model of the diffusion of multiple impurity species in silicon during local oxidation is discussed. The model describes the redistribution of the dopand atoms which is effected by diffusion and electric field. A numerical method based on the coordinated splitting of the parabolic differential equations and boundary conditions is proposed. Local onedimensional difference schemes are constructed. The calculations are performed in twodimensional domain with moving boundary.