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Matematicheskoe modelirovanie, 1995, Volume 7, Number 1, Pages 110–117 (Mi mm1662)  
Applied codes

The code for modelling of the photolithographic process of the protective pattern forming by use of positive photoresistors

V. I. Cherednik, V. M. Treushnikov, A. V. Oleynik, O. A. Usacheva

N. I. Lobachevski State University of Nizhni Novgorod
Full-text PDF (953 kB)
Received: 23.10.1992
Bibliographic databases:
Language: Russian
Citation: V. I. Cherednik, V. M. Treushnikov, A. V. Oleynik, O. A. Usacheva, “The code for modelling of the photolithographic process of the protective pattern forming by use of positive photoresistors”, Matem. Mod., 7:1 (1995), 110–117
Citation in format AMSBIB
\Bibitem{CheTreOle95}
\by V.~I.~Cherednik, V.~M.~Treushnikov, A.~V.~Oleynik, O.~A.~Usacheva
\paper The code for modelling of the photolithographic process of the protective pattern forming by use of positive photoresistors
\jour Matem. Mod.
\yr 1995
\vol 7
\issue 1
\pages 110--117
\mathnet{http://mi.mathnet.ru/mm1662}
\zmath{https://zbmath.org/?q=an:0974.78550}
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    		Математическое моделирование
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