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Matematicheskoe modelirovanie, 2005, Volume 17, Number 2, Pages 109–118 (Mi mm160)  
Mathematical model of thermo-electro-hydrodynamic convention in semiconductors in the presence of charge carriers collisions

R. A. Brazwe, O. N. Kudelin

Ulyanovsk State Technical University
Full-text PDF (187 kB)
Abstract: From the Boltzmann?s kinetic equation and Maxwell?s equations the relations describing the transfer of charge carriers in semiconductors in hydrodynamic approximation are derived. The mathematical model of thermoelectrohydrodynamic convection in monopolar semiconductors in the presence of charge carriers collisions with lattice and a crystal impurities is built. The dependence of convective instability and Ray-ligh?s critical number from a relaxation time of momentum are investigated.
Received: 12.11.2003
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Language: Russian
Citation: R. A. Brazwe, O. N. Kudelin, “Mathematical model of thermo-electro-hydrodynamic convention in semiconductors in the presence of charge carriers collisions”, Matem. Mod., 17:2 (2005), 109–118
Citation in format AMSBIB
\Bibitem{BraKud05}
\by R.~A.~Brazwe, O.~N.~Kudelin
\paper Mathematical model of thermo-electro-hydrodynamic convention in semiconductors in the presence of charge carriers collisions
\jour Matem. Mod.
\yr 2005
\vol 17
\issue 2
\pages 109--118
\mathnet{http://mi.mathnet.ru/mm160}
\zmath{https://zbmath.org/?q=an:1112.76452}
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    		Математическое моделирование
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