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Matematicheskoe modelirovanie, 1997, Volume 9, Number 9, Pages 75–82 (Mi mm1458)  
This article is cited in 1 scientific paper (total in 1 paper)

Mathematical models and computer experiment

Field emission from silicon

V. A. Fedirkoa, V. A. Nikolaevab

a Moscow State Technological University "Stankin"
b Institute for Mathematical Modelling, Russian Academy of Sciences
Full-text PDF (625 kB) Citations (1)
Abstract: Physical and mathematical model for numerical simulation of field emission from silicon is developed taking into account the nonhomogeneous electron heating. Effective discrete scheme and algorithm are realized in the framework of quasi-hydrodynamic approach to solve the problem of electron transport with complex integral non-linear boundary conditions. Field emission cathode characteristics are calculated and discussed in connection with application to analysis of vacuum microelectronics devices.
Received: 05.07.1996
Bibliographic databases:
UDC: 533.539
Language: Russian
Citation: V. A. Fedirko, V. A. Nikolaeva, “Field emission from silicon”, Matem. Mod., 9:9 (1997), 75–82
Citation in format AMSBIB
\Bibitem{FedNik97}
\by V.~A.~Fedirko, V.~A.~Nikolaeva
\paper Field emission from silicon
\jour Matem. Mod.
\yr 1997
\vol 9
\issue 9
\pages 75--82
\mathnet{http://mi.mathnet.ru/mm1458}
\zmath{https://zbmath.org/?q=an:1071.82568}
Linking options:
  • https://www.mathnet.ru/eng/mm1458
  • https://www.mathnet.ru/eng/mm/v9/i9/p75
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Математическое моделирование
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