Matematicheskoe modelirovanie
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Matem. Mod.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Matematicheskoe modelirovanie, 1997, Volume 9, Number 8, Pages 110–118 (Mi mm1451)  
This article is cited in 1 scientific paper (total in 2 paper)

Computational methods and algorithms

Investigation of silicon wafer defects by discrete sources method

Yu. A. Eremin, N. V. Orlov, A. G. Sveshnikov

M. V. Lomonosov Moscow State University
Full-text PDF (794 kB) Citations (2)
Abstract: In this paper we investigate the light scattering by silicon wafer defect on the base of Discrete Sources Method. The problem of construction and realization of numerical sheme is examined. Some examples of comparative analysis of the scatterig properties for particle and pit at the interface are given.
Received: 15.11.1996
Bibliographic databases:
UDC: 533.539
Language: Russian
Citation: Yu. A. Eremin, N. V. Orlov, A. G. Sveshnikov, “Investigation of silicon wafer defects by discrete sources method”, Matem. Mod., 9:8 (1997), 110–118
Citation in format AMSBIB
\Bibitem{EreOrlSve97}
\by Yu.~A.~Eremin, N.~V.~Orlov, A.~G.~Sveshnikov
\paper Investigation of silicon wafer defects by discrete sources method
\jour Matem. Mod.
\yr 1997
\vol 9
\issue 8
\pages 110--118
\mathnet{http://mi.mathnet.ru/mm1451}
\zmath{https://zbmath.org/?q=an:1071.78500}
Linking options:
  • https://www.mathnet.ru/eng/mm1451
  • https://www.mathnet.ru/eng/mm/v9/i8/p110
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Математическое моделирование
    Statistics & downloads:
    Abstract page:278
    Full-text PDF :100
    First page:1
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024