Analysis of structures based on graded semiconductor compound

A diffusion-drift model for diode structure based on graded III–V semiconductor compounds is considered. The model is developed under the assumption of an electrically neutral base region. An existence-uniqueness result in the classes of generalized functions is proved. In order to find numerical solution, the scheme of the method of lines is constructed and justified, an estimate of convergence rate is received. Analysis of the results of numerical experiment is presented.