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This article is cited in 1 scientific paper (total in 1 paper)
Mathematical models and computer experiment
Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon
T. A. Kholomina Ryazan State Radiotechnical Academy
Abstract:
Regressional equations shown the implantation regime influence upon value of mobile charge, dielectric constant and electrical resistance of $\mathrm{Si0}_2$ films on silicon are obtained.
Received: 22.01.1998
Citation:
T. A. Kholomina, “Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon”, Matem. Mod., 10:7 (1998), 21–24
Linking options:
https://www.mathnet.ru/eng/mm1299 https://www.mathnet.ru/eng/mm/v10/i7/p21
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Abstract page: | 176 | Full-text PDF : | 81 | First page: | 1 |
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