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Matematicheskoe modelirovanie, 1998, Volume 10, Number 7, Pages 21–24 (Mi mm1299)  
This article is cited in 1 scientific paper (total in 1 paper)

Mathematical models and computer experiment

Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon

T. A. Kholomina

Ryazan State Radiotechnical Academy
Full-text PDF (317 kB) Citations (1)
Abstract: Regressional equations shown the implantation regime influence upon value of mobile charge, dielectric constant and electrical resistance of $\mathrm{Si0}_2$ films on silicon are obtained.
Received: 22.01.1998
Language: Russian
Citation: T. A. Kholomina, “Implantation regime influence upon parameters of $\mathrm{Si0}_2$ films on silicon”, Matem. Mod., 10:7 (1998), 21–24
Citation in format AMSBIB
\Bibitem{Kho98}
\by T.~A.~Kholomina
\paper Implantation regime influence upon parameters of~$\mathrm{Si0}_2$ films on silicon
\jour Matem. Mod.
\yr 1998
\vol 10
\issue 7
\pages 21--24
\mathnet{http://mi.mathnet.ru/mm1299}
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  • https://www.mathnet.ru/eng/mm1299
  • https://www.mathnet.ru/eng/mm/v10/i7/p21
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Математическое моделирование
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