1,2,3-Triazolylfullerene-based n-type semiconductor materials for organic field-effect transistors

The paper describes new organic field-effect transistors with 1-(4-aryl-1,2,3-triazol-1-yl)-2-butylfullerene as a semiconductor layer. The prototype transistor having 2-naphthyl moieties have higher electron mobilities (0.090 ± 10% cm² V^–1 s^–1) than that with with biphenyl-4-yl moieties (0.033 ± 10% cm² V^–1 s^–1). The thin film surfaces of triazolylfullerenes with 3-thienyl and 2-naphthyl groups were more uniform and had a lower roughness, which is confirmed by atomic force microscopy studies.