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Zhurnal Tekhnicheskoi Fiziki, 1987, Volume 57, Issue 10, Pages 1925–1929 (Mi jtf922)  
OPTIMIZATION OF FREQUENCY AND STATISTIC CHARACTERISTICS OF POWER SEMICONDUCTING DEVICES BY CREATION OF HIGH RECOMBINATION LOCAL ZONES IN BASIC FIELDS

V. M. Volle, V. B. Voronkov, I. V. Grekhov, G. M. Gusinskiy, V. A. Kozlov, V. O. Naidenov

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (657 kB)
Received: 25.12.1986
Bibliographic databases:
Document Type: Article
UDC: 621.382
Language: Russian
Citation: V. M. Volle, V. B. Voronkov, I. V. Grekhov, G. M. Gusinskiy, V. A. Kozlov, V. O. Naidenov, “OPTIMIZATION OF FREQUENCY AND STATISTIC CHARACTERISTICS OF POWER SEMICONDUCTING DEVICES BY CREATION OF HIGH RECOMBINATION LOCAL ZONES IN BASIC FIELDS”, Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987), 1925–1929
Citation in format AMSBIB
\Bibitem{VolVorGre87}
\by V.~M.~Volle, V.~B.~Voronkov, I.~V.~Grekhov, G.~M.~Gusinskiy, V.~A.~Kozlov, V.~O.~Naidenov
\paper OPTIMIZATION OF FREQUENCY AND STATISTIC CHARACTERISTICS OF POWER
SEMICONDUCTING DEVICES BY CREATION OF HIGH RECOMBINATION LOCAL ZONES IN
BASIC FIELDS
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1987
\vol 57
\issue 10
\pages 1925--1929
\mathnet{http://mi.mathnet.ru/jtf922}
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