Formation of the light extracting surface of IR (850 nm) light-emitting diodes

Investigation of post-growth technology development of IR (850 nm) light-emitting diodes based on AlGaAs/GaAs heterostructures, grown by metalorganic vapour-phase epitaxy, has been carried out. Various methods of texturing and brightening the light extracting diode surfaces have been investigated, and a technology for forming optical elements has been developed. Analyzed was the relationship between chip formation technology and photovoltaic parameters of light-emitting diodes: electroluminescence intensity, optical power and external quantum efficiency. As a result of the developed technology, a twofold optical power value increase was achieved, which amounted > 400 mW at current 800 mA.