Analysis and comparison of characteristics of the uncooled millimeter-wave diode detectors within a generalized theoretical model

Within the framework of a generalized theoretical model of the uncooled millimeter-wave diode detectors, an analysis and comparison of their achievable characteristics was carried out. The approach is based on the tunnel model of current transfer. A one-dimensional structure that consists of a semiconductor/dielectric barrier layer between two electrodes is considered. The scattering of charge carriers in the barrier layer is assumed to be insignificant. Direct detection of a weak millimeter-wave signal is theoretically studied. Expressions for the current, the conductance, the curvature coefficient of the diode are derived. Possible families of the considered class of detectors are determined, their achievable characteristics are analyzed. It is shown that all detectors of the considered class can be divided into two families with qualitatively different behavior of the curvature coefficient in dependance on the diode conductance. It is obtained that the current sensitivity of the diodes that belong to the first family cannot exceed 20 A/W, while diodes of the second family can achieve $\sim$500 A/W. However, this value is significantly lower at a zero-bias condition, when only $\sim$30 A/W can be practically obtained for the second family diodes. The results of this work can be useful at choosing the diode type for a specific practical problem.