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Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 2, paper published in the English version journal (Mi jtf6674)  
Papers published in the English version of the journal

Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

G. G. Zegryaa, V. P. Ulina, A. G. Zegryaa, N. V. Ulina, V. M. Fraimana, Yu. M. Mikhailovb

a Ioffe Institute, 194021, St. Petersburg, Russia
b Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Full-text PDF (23 kB)
English version:
Technical Physics, 2021, Volume 66, Issue 2, Pages 367
DOI: https://doi.org/10.1134/S106378422102016X
Bibliographic databases:
Document Type: Letter, errata
Language: English
Citation: G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Tech. Phys., 66:2 (2021), 367
Citation in format AMSBIB
\Bibitem{ZegUliZeg21}
\by G.~G.~Zegrya, V.~P.~Ulin, A.~G.~Zegrya, N.~V.~Ulin, V.~M.~Fraiman, Yu.~M.~Mikhailov
\paper Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
\jour Tech. Phys.
\yr 2021
\vol 66
\issue 2
\pages 367
\mathnet{http://mi.mathnet.ru/jtf6674}
\crossref{https://doi.org/10.1134/S106378422102016X}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85105872926}
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