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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 1, Pages 32–36
(Mi jtf6651)
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Atomic and molecular physics
Effect of inelastic and elastic energy losses of Xe ions on the evolution of hydrogen blisters in silicon
V. F. Reutov, S. N. Dmitriev, A. S. Sokhatskii, A. G. Zaluzhny National Engineering Physics Institute "MEPhI", Moscow
Abstract:
We analyze the effect of irradiation by heavy ions on the formation of blisters on the silicon surface preliminarily ion-doped with hydrogen. An attempt is made at differentiating inelastic and elastic processes of interaction between ions and Si atoms using bombardment of the sample with high-energy charged particles through a bent absorbing filter by varying the radiation doses and the energy of bombarding Xe ions. It is found that irrespective of specific ionization energy losses of heavy ions, the blister formation is completely suppressed in the zone of the inelastic interaction during postradiation annealing. Conversely, stimulated development of hydrogen porosity takes place at the same time in the zone of elastic interaction, which is manifested in the form of blisters and flaking.
Keywords:
Radiation Defect, Silicon Sample, Inelastic Interaction, Blister Formation, Inelastic Energy Loss.
Received: 17.03.2015
Citation:
V. F. Reutov, S. N. Dmitriev, A. S. Sokhatskii, A. G. Zaluzhny, “Effect of inelastic and elastic energy losses of Xe ions on the evolution of hydrogen blisters in silicon”, Zhurnal Tekhnicheskoi Fiziki, 86:1 (2016), 32–36; Tech. Phys., 61:1 (2016), 28–32
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https://www.mathnet.ru/eng/jtf6651 https://www.mathnet.ru/eng/jtf/v86/i1/p32
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