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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 2, Pages 78–84 (Mi jtf6634)  
This article is cited in 2 scientific papers (total in 2 papers)

Solid-State Electronics

Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

N. I. Solina, L. N. Romasheva, S. V. Naumova, A. A. Saraninb, A. V. Zotovb, D. A. Olyanichb, V. G. Kotlyarb, O. A. Utasb

a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
Full-text PDF (382 kB) Citations (2)
Abstract: We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered–layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p–n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2–3 orders of magnitude.
Keywords: Manganite, Percolation Threshold, Magnetic Semiconductor, Contact Potential Difference, Lanthanum Manganite.
Received: 23.10.2014
Revised: 24.02.2015
English version:
Technical Physics, 2016, Volume 61, Issue 2, Pages 233–239
DOI: https://doi.org/10.1134/S1063784216020237
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. I. Solin, L. N. Romashev, S. V. Naumov, A. A. Saranin, A. V. Zotov, D. A. Olyanich, V. G. Kotlyar, O. A. Utas, “Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 86:2 (2016), 78–84; Tech. Phys., 61:2 (2016), 233–239
Citation in format AMSBIB
\Bibitem{SolRomNau16}
\by N.~I.~Solin, L.~N.~Romashev, S.~V.~Naumov, A.~A.~Saranin, A.~V.~Zotov, D.~A.~Olyanich, V.~G.~Kotlyar, O.~A.~Utas
\paper Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 86
\issue 2
\pages 78--84
\mathnet{http://mi.mathnet.ru/jtf6634}
\elib{https://elibrary.ru/item.asp?id=25669208}
\transl
\jour Tech. Phys.
\yr 2016
\vol 61
\issue 2
\pages 233--239
\crossref{https://doi.org/10.1134/S1063784216020237}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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