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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 2, Pages 30–36
(Mi jtf6627)
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This article is cited in 1 scientific paper (total in 1 paper)
Plasma
Comparative analysis of breakdown mechanism in thin SiO$_2$ oxide films in metal–oxide–semiconductor structures under the action of heavy charged particles and a pulsed voltage
V. F. Zinchenko, K. V. Lavrent’ev, V. V. Emel'yanov, A. S. Vatuev Research Institute of Scientific Instruments, State Nuclear Energy Corporation Rosatom, Lytkarino, Moscow oblast, Russia
Abstract:
Regularities in the breakdown of thin SiO$_2$ oxide films in metal–oxide–semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the SiO$_2$ breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range.
Keywords:
Electric Field Strength, Plasma Channel, Heavy Charged Particle, Oxide Breakdown, Breakdown Region.
Received: 29.04.2015
Citation:
V. F. Zinchenko, K. V. Lavrent’ev, V. V. Emel'yanov, A. S. Vatuev, “Comparative analysis of breakdown mechanism in thin SiO$_2$ oxide films in metal–oxide–semiconductor structures under the action of heavy charged particles and a pulsed voltage”, Zhurnal Tekhnicheskoi Fiziki, 86:2 (2016), 30–36; Tech. Phys., 61:2 (2016), 187–193
Linking options:
https://www.mathnet.ru/eng/jtf6627 https://www.mathnet.ru/eng/jtf/v86/i2/p30
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