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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 6, Pages 126–131
(Mi jtf6535)
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This article is cited in 4 scientific papers (total in 4 papers)
Physical electronics
Formation of textured Ni(200) and Ni(111) films by magnetron sputtering
A. S. Dzhumalievab, Yu. V. Nikulinab, Yu. A. Filimonovabc a Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
b Saratov State University
c Yuri Gagarin State Technical University of Saratov
Abstract:
The effect of the working gas pressure ($P\approx$ 1.33–0.09 Pa) and the substrate temperature ($T_{s}\approx$ 77–550 K) on the texture and the microstructure of nickel films deposited by magnetron sputtering onto SiO$_2$/Si substrates is studied. Ni(200) films with a transition type of microstructure are shown to form at growth parameters $P\approx$ 0.13–0.09 Pa and $T_{s}\approx$ 300–550 K, which ensure a high migration ability of nickel adatoms on a substrate. This transition type is characterized by a change of the film structure from quasi-homogeneous to quasi-columnar when a film reaches a critical thickness. Ni(111) films with a columnar microstructure and high porosity form at a low migration ability, which takes place at $P\approx$ 1.33–0.3 Pa or upon cooling a substrate to $T_{s}\approx$ 77 K.
Received: 20.10.2015
Citation:
A. S. Dzhumaliev, Yu. V. Nikulin, Yu. A. Filimonov, “Formation of textured Ni(200) and Ni(111) films by magnetron sputtering”, Zhurnal Tekhnicheskoi Fiziki, 86:6 (2016), 126–131; Tech. Phys., 61:6 (2016), 924–928
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https://www.mathnet.ru/eng/jtf6535 https://www.mathnet.ru/eng/jtf/v86/i6/p126
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