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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 7, Pages 94–99
(Mi jtf6505)
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This article is cited in 11 scientific papers (total in 11 papers)
Solid-State Electronics
Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells
A. A. Gorbatsevichab, A. B. Danilinc, V. I. Korneeva, E. P. Magomedbekovd, A. A. Moline a National Research University of Electronic Technology
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
c CJSC Innotra, Moscow
d D. Mendeleev University of Chemical Technology of Russia
e JSC Atommed Center, Moscow, Russia
Abstract:
Beta-voltaic cells based on standard silicon solar cells with bilateral coating with beta-radiation sources in the form of $^{63}$Ni isotope have been studied experimentally and by numerical simulation. The optimal parameters of the cell, including its thickness, the doping level of the substrate, the depth of the $p$–$n$ junction on its front side, and the $p^+$ layer on the back side, as well as the activity of the source material, have been calculated. The limiting theoretical values of the open-circuit voltage (0.26 V), short-circuiting current (2.1 $\mu$A), the output power of the cell (0.39 $\mu$W), and the efficiency of the conversion of the radioactive energy onto the electric energy (4.8%) have been determined for a beta-source activity of 40 mCi. The results of numerical analysis have been compared with the experimental data.
Received: 01.12.2015
Citation:
A. A. Gorbatsevich, A. B. Danilin, V. I. Korneev, E. P. Magomedbekov, A. A. Molin, “Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells”, Zhurnal Tekhnicheskoi Fiziki, 86:7 (2016), 94–99; Tech. Phys., 61:7 (2016), 1053–1059
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https://www.mathnet.ru/eng/jtf6505 https://www.mathnet.ru/eng/jtf/v86/i7/p94
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