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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 10, Pages 149–152 (Mi jtf6433)  
This article is cited in 2 scientific papers (total in 2 papers)

Brief Communications

Substrate-induced bandgap in the spectrum of an epitaxial graphene layer

Z. Z. Alisultanovabc

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
c Daghestan State University, Makhachkala
Full-text PDF (176 kB) Citations (2)
Abstract: It has been shown that a bandgap can appear in the spectrum of a graphene bilayer formed on the surface of a semiconductor. Bandgap widths have been estimated for various SiC polytypes. The predicted effect is important for the practical applications of graphene.
Received: 02.02.2016
English version:
Technical Physics, 2016, Volume 61, Issue 10, Pages 1591–1594
DOI: https://doi.org/10.1134/S1063784216100029
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Z. Z. Alisultanov, “Substrate-induced bandgap in the spectrum of an epitaxial graphene layer”, Zhurnal Tekhnicheskoi Fiziki, 86:10 (2016), 149–152; Tech. Phys., 61:10 (2016), 1591–1594
Citation in format AMSBIB
\Bibitem{Ali16}
\by Z.~Z.~Alisultanov
\paper Substrate-induced bandgap in the spectrum of an epitaxial graphene layer
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 86
\issue 10
\pages 149--152
\mathnet{http://mi.mathnet.ru/jtf6433}
\elib{https://elibrary.ru/item.asp?id=27368550}
\transl
\jour Tech. Phys.
\yr 2016
\vol 61
\issue 10
\pages 1591--1594
\crossref{https://doi.org/10.1134/S1063784216100029}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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