Deposition of diamond structures from interacting gas jets

We have reported on the results of experiments on the gas-jet synthesis of diamond from methane and hydrogen flows for various mixing conditions. An original method of separate feed of gas jet has been proposed, which makes it possible to attain a high growth rate for the diamond phase. The synthesis of diamond structures in gas-jet deposition has been studied for separate feeds of two flows (hydrogen and the mixture of hydrogen with methane) in two versions, i.e., with a lateral feed of the methane-containing mixture and axisymmetric feed. Experiments were performed under the following conditions: the temperature of the surface (activating hydrogen) 2400 K, a substrate temperature of 900–1300 K, pressure in the deposition chamber 2 $\times$ 10$^2$ Pa, gas mixture fluxes (relative to hydrogen) 1500 ncm$^3$/min, CH$_4$ concentration in H$_2$ of 0.1–0.7%, and the distance from the substrate to the reactor 10 mm. In the case of a separate feed of the methanecontaining gas and hydrogen, a deposition rate of 20 $\mu$m/h was attained. In the case of an axisymmetric separate feed of the gases, a single crystal with a mass of 0.6 mg was grown, which corresponded to the deposition rate of approximately 200 $\mu$m/h.