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Brief Communications
Silicon-based shortwave differential photodetector
V. V. Gavrushko, A. S. Ionov, O. R. Kadriev, V. A. Lastkin Yaroslav-the-Wise Novgorod State University
Abstract:
The silicon-based photodetector that contains two $n^+$–$p$ photodiode with equal areas has been described. One of the photodiodes had a wide spectral characteristic with high sensitivity in the UV range. The sensitivity of the second photodiode was decreased in the shortwave range via the formation of additional recombination centers in the near-surface region using the implantation of As ions. The study of the spectral sensitivity of the differential signal obtained by photocurrent subtraction has revealed a profound shortwave spectral characteristic. The boundaries of spectral range at $\lambda_{0.5}$ were in the limits of 0.27–0.44 $\mu$m. The maximum sensitivity corresponded to $\lambda_{\operatorname{max}}$ = 0.36 $\mu$m. The sensitivity of the differential channel at this wavelength reached 83% of that of the wide-range channel.
Received: 09.02.2016 Revised: 18.05.2016
Citation:
V. V. Gavrushko, A. S. Ionov, O. R. Kadriev, V. A. Lastkin, “Silicon-based shortwave differential photodetector”, Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017), 310–311; Tech. Phys., 62:2 (2017), 338–340
Linking options:
https://www.mathnet.ru/eng/jtf6328 https://www.mathnet.ru/eng/jtf/v87/i2/p310
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