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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 5, Pages 758–761 (Mi jtf6240)  
This article is cited in 12 scientific papers (total in 12 papers)

Physics of nanostructures

Composition and properties of nanoscale Si structures formed on the CoSi$_{2}$/Si(111) surface by Ar$^+$ ion bombardment

Y. S. Ergashov

Tashkent State Technical University
Full-text PDF (163 kB) Citations (12)
Abstract: The variations in the composition and structure of CoSi$_{2}$/Si(111) surface layers under Ar$^+$ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi$_2$ surface at low doses $D\le$ 10$^{15}$ cm$^{-2}$), and a pure Si nanofilm forms at high doses.
Received: 07.07.2016
English version:
Technical Physics, 2017, Volume 62, Issue 5, Pages 777–780
DOI: https://doi.org/10.1134/S1063784217050103
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Y. S. Ergashov, “Composition and properties of nanoscale Si structures formed on the CoSi$_{2}$/Si(111) surface by Ar$^+$ ion bombardment”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 758–761; Tech. Phys., 62:5 (2017), 777–780
Citation in format AMSBIB
\Bibitem{Erg17}
\by Y.~S.~Ergashov
\paper Composition and properties of nanoscale Si structures formed on the CoSi$_{2}$/Si(111) surface by Ar$^+$ ion bombardment
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 87
\issue 5
\pages 758--761
\mathnet{http://mi.mathnet.ru/jtf6240}
\elib{https://elibrary.ru/item.asp?id=29365790}
\transl
\jour Tech. Phys.
\yr 2017
\vol 62
\issue 5
\pages 777--780
\crossref{https://doi.org/10.1134/S1063784217050103}
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    • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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