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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 5, Pages 758–761
(Mi jtf6240)
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This article is cited in 12 scientific papers (total in 12 papers)
Physics of nanostructures
Composition and properties of nanoscale Si structures formed on the CoSi$_{2}$/Si(111) surface by Ar$^+$ ion bombardment
Y. S. Ergashov Tashkent State Technical University
Abstract:
The variations in the composition and structure of CoSi$_{2}$/Si(111) surface layers under Ar$^+$ ion bombardment with subsequent annealing has been studied. It has been demonstrated that nanocluster phases enriched with Si atoms form on the CoSi$_2$ surface at low doses $D\le$ 10$^{15}$ cm$^{-2}$), and a pure Si nanofilm forms at high doses.
Received: 07.07.2016
Citation:
Y. S. Ergashov, “Composition and properties of nanoscale Si structures formed on the CoSi$_{2}$/Si(111) surface by Ar$^+$ ion bombardment”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 758–761; Tech. Phys., 62:5 (2017), 777–780
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https://www.mathnet.ru/eng/jtf6240 https://www.mathnet.ru/eng/jtf/v87/i5/p758
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Abstract page: | 27 | Full-text PDF : | 5 |
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