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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 7, Pages 1061–1065
DOI: https://doi.org/10.21883/JTF.2017.07.44679.1744
(Mi jtf6186)
 

Solid-State Electronics

Charge transfer and thermopower in TlGdS$_{2}$

S. N. Mustafaevaa, S. M. Asadovb

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku
Abstract: The temperature dependences of the dc conductivity and thermoelectric coefficient of TlGdS$_2$ in the temperature interval of 77–373 K have been studied for the first time. It has been found that, at low temperatures (114–250 K), the compound has conductivity of the $p$-type and charge transfer in its energy gap follows the hopping mechanism. The main parameters of localized electronic states in the energy gap have been determined.
Received: 26.01.2016
Revised: 25.11.2016
English version:
Technical Physics, 2017, Volume 62, Issue 7, Pages 1077–1081
DOI: https://doi.org/10.1134/S1063784217070167
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. N. Mustafaeva, S. M. Asadov, “Charge transfer and thermopower in TlGdS$_{2}$”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1061–1065; Tech. Phys., 62:7 (2017), 1077–1081
Citation in format AMSBIB
\Bibitem{MusAsa17}
\by S.~N.~Mustafaeva, S.~M.~Asadov
\paper Charge transfer and thermopower in TlGdS$_{2}$
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 87
\issue 7
\pages 1061--1065
\mathnet{http://mi.mathnet.ru/jtf6186}
\crossref{https://doi.org/10.21883/JTF.2017.07.44679.1744}
\elib{https://elibrary.ru/item.asp?id=29730226}
\transl
\jour Tech. Phys.
\yr 2017
\vol 62
\issue 7
\pages 1077--1081
\crossref{https://doi.org/10.1134/S1063784217070167}
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