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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 8, Pages 1275–1278
DOI: https://doi.org/10.21883/JTF.2017.08.44742.2152
(Mi jtf6169)
 

Brief Communications

Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure

A. A. Andreev, E. A. Vavilova, I. S. Ezubchenko, M. L. Zanaveskin, I. O. Mayboroda

National Research Centre "Kurchatov Institute", Moscow
Abstract: The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors has been studied. It has been found that thin GaN layers deposited in situ at 550$^\circ$C do not exhibit polar properties and do not change the carrier concentration in the 2DEG. However, GaN layers deposited at 830$^\circ$C decrease the carrier concentration in the 2DEG, which is in agreement with theoretical calculations. Using the reflected high-energy electron diffraction technique, it has been established that this effect may be associated with different structures and morphologies of GaN layers deposited at different temperatures.
Received: 27.12.2016
English version:
Technical Physics, 2017, Volume 62, Issue 8, Pages 1288–1291
DOI: https://doi.org/10.1134/S1063784217080035
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Andreev, E. A. Vavilova, I. S. Ezubchenko, M. L. Zanaveskin, I. O. Mayboroda, “Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure”, Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017), 1275–1278; Tech. Phys., 62:8 (2017), 1288–1291
Citation in format AMSBIB
\Bibitem{AndVavEzu17}
\by A.~A.~Andreev, E.~A.~Vavilova, I.~S.~Ezubchenko, M.~L.~Zanaveskin, I.~O.~Mayboroda
\paper Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 87
\issue 8
\pages 1275--1278
\mathnet{http://mi.mathnet.ru/jtf6169}
\crossref{https://doi.org/10.21883/JTF.2017.08.44742.2152}
\elib{https://elibrary.ru/item.asp?id=29825046}
\transl
\jour Tech. Phys.
\yr 2017
\vol 62
\issue 8
\pages 1288--1291
\crossref{https://doi.org/10.1134/S1063784217080035}
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