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This article is cited in 3 scientific papers (total in 3 papers)
Brief Communications
Spin-tunneling magnetoresistive elements based on multilayered nanostructures
V. V. Amelicheva, P. A. Belyakova, D. V. Vasilyeva, D. A. Zhukova, Yu. V. Kazakova, D. V. Kostyuka, E. P. Orlova, S. I. Kasatkinb, A. I. Krikunovc a SPC "Technological Center" MIET, Zelenograd, Russia
b V. A. Trapeznikov Institute of Control Sciences of Russian Academy of Sciences, Moscow
c "Fotron-Auto" Scientific Manufacture Enterprise, Moscow
Abstract:
The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been considered. The parameters of magnetic annealing of STMR elements have experimentally been obtained. The results of these experiments have shown that a magnitude of the magnetoresistive effect can increase by four to five or more times. The test samples of STMR elements, which have a magnitude of the giant magnetoresistive effect up to 50% and a resistance of 30–35 k$\Omega$, have been studied in the absence of a magnetic field.
Received: 29.11.2016
Citation:
V. V. Amelichev, P. A. Belyakov, D. V. Vasilyev, D. A. Zhukov, Yu. V. Kazakov, D. V. Kostyuk, E. P. Orlov, S. I. Kasatkin, A. I. Krikunov, “Spin-tunneling magnetoresistive elements based on multilayered nanostructures”, Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017), 1268–1270; Tech. Phys., 62:8 (2017), 1281–1283
Linking options:
https://www.mathnet.ru/eng/jtf6167 https://www.mathnet.ru/eng/jtf/v87/i8/p1268
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