Magnetoelectric effect in gallium arsenide–nickel–tin–nickel multilayer structures

Experimental data have been presented for the magnetoelectric effect in nickel–tin–nickel multilayer structures grown on a GaAs substrate by cathodic electrodeposition. The method of fabricating these structures has been described, and the frequency dependence of the effect has been demonstrated. It has been shown that tin used as an intermediate layer reduces mechanical stresses due to the phase mismatch at the Ni–GaAs interface and, thus, makes it possible to grow good structures with a 70-$\mu$m-thick Ni layer. The grown structures offer good adhesion between layers and a high Q factor.