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This article is cited in 2 scientific papers (total in 2 papers)
Theoretical and Mathematical Physics
Extension of the Mott–Gurney law for a bilayer gap
A. E. Dubinovabc, I. N. Kitayevabc a Federal State Unitary Enterprise "Russian Federal Nuclear Center — All-Russian Research Institute of Experimental Physics", Sarov, Nizhny Novgorod region
b National Engineering Physics Institute "MEPhI", Moscow
c Russian Federal Nuclear Center, All-Russia Research Institute of Experimental Physics, Sarov, Nizhny Novgorod oblast, Russia
Abstract:
Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott–Gurney law for a bilayer diode).
Received: 15.02.2017 Revised: 17.10.2017
Citation:
A. E. Dubinov, I. N. Kitayev, “Extension of the Mott–Gurney law for a bilayer gap”, Zhurnal Tekhnicheskoi Fiziki, 88:4 (2018), 483–486; Tech. Phys., 63:4 (2018), 467–470
Linking options:
https://www.mathnet.ru/eng/jtf5930 https://www.mathnet.ru/eng/jtf/v88/i4/p483
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