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Solid-State Electronics
Combined technology fabrication of spin-valve magnetoresistive elements and micromagnets
V. V. Amelichevab, P. A. Belyakovab, D. V. Kostyukab, D. V. Vasilyevab, E. P. Orlovab, Yu. V. Kazakovb, S. I. Kasatkinc, A. I. Krikunovd a LLC Scientific-Production Enterprise "Technology", Zelenograd, Moscow, Russia
b Research and Production Complex "Technological Center" MIET, Zelenograd, Moscow, Russia
c V. A. Trapeznikov Institute of Control Sciences of Russian Academy of Sciences, Moscow
d "Fotron-Auto" Scientific Manufacture Enterprise, Moscow
Abstract:
We present the research results of the fabrication technology of magnetoresistive (MR) elements based on the multilayer spin-valve magnetoresistive (SVMR) Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Та nanostructures and CoNi micromagnets for the construction of digital galvanic interchanges and the magnetic field sensors. The results of experimental studies of test elements based on multilayer SVMR nanostructures with an MR effect from 7 to 8% and films of magnetically hard materials with a coercive force of up to 95 Oe formed on a single silicon die are presented.
Received: 21.09.2017
Citation:
V. V. Amelichev, P. A. Belyakov, D. V. Kostyuk, D. V. Vasilyev, E. P. Orlov, Yu. V. Kazakov, S. I. Kasatkin, A. I. Krikunov, “Combined technology fabrication of spin-valve magnetoresistive elements and micromagnets”, Zhurnal Tekhnicheskoi Fiziki, 88:6 (2018), 874–876; Tech. Phys., 63:6 (2018), 848–850
Linking options:
https://www.mathnet.ru/eng/jtf5895 https://www.mathnet.ru/eng/jtf/v88/i6/p874
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