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This article is cited in 1 scientific paper (total in 1 paper)
Solid-State Electronics
Stratification of Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ single crystals and sintering of the obtained micro- and nanoscale plates
N. S. Petrovaab, V. A. Danilova, Yu. A. Boikova, V. S. Kuznetsovaab, S. V. Novikova a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Abstract:
The use of surface active liquids facilitates intense stratification of mechanically strained Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ crystallites. A Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ heat element with specified thickness and structure is formed by layer-by-layer deposition of “thermoelectric ink” on its free surface. A heat treatment of the formed thermoelectric element in argon at a temperature of 800 K makes it possible to minimize radically the resistance of the grain boundaries introduced into its bulk.
Received: 12.12.2017
Citation:
N. S. Petrova, V. A. Danilov, Yu. A. Boikov, V. S. Kuznetsova, S. V. Novikov, “Stratification of Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ single crystals and sintering of the obtained micro- and nanoscale plates”, Zhurnal Tekhnicheskoi Fiziki, 88:7 (2018), 1057–1059; Tech. Phys., 63:7 (2018), 1026–1028
Linking options:
https://www.mathnet.ru/eng/jtf5870 https://www.mathnet.ru/eng/jtf/v88/i7/p1057
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