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Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 8, Pages 1273–1278
DOI: https://doi.org/10.21883/JTF.2018.08.46320.2351 (Mi jtf5852) 		 
This article is cited in 11 scientific papers (total in 11 papers)

Experimental instruments and technique

Atomic force microscopy measurement of the resistivity of semiconductors

V. A. Smirnova, R. V. Tominova, N. I. Alyab’evab, M. V. Il'inaa, V. V. Polyakovaa, Al. V. Bykova, O. A. Ageeva

a Institute of Nanotechnologies, Electronics, and Equipment Engineering, Southern Federal University, Taganrog, Russia
b University of Paris-Sud, Orsay cedex, France
Full-text PDF (1098 kB) Citations (11)
DOI: https://doi.org/10.21883/JTF.2018.08.46320.2351
Abstract: The surface of silicon substrates has been studied experimentally and theoretically by the method of atomic force microscopy spreading resistance imaging, and measuring techniques for the spreading resistance of semiconductors have been developed based on these data. It has been shown that the resistivity of silicon can be determined reliably if the force with which the probe is pressed against the substrate exceeds some threshold. The influence of the environment on the values of currents in the probe–substrate system has been studied. It has been found that the electrical performance of semiconductors can be properly determined by atomic force microscopy spreading resistance imaging under high-vacuum conditions.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-14023 офи_м
16-32-0069 мол_а
Southern Federal University ВнГр-07/2017-02
ВнГр-07/2017-26
Received: 24.05.2017
English version:
Technical Physics, 2018, Volume 63, Issue 8, Pages 1236–1241
DOI: https://doi.org/10.1134/S1063784218080182
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Smirnov, R. V. Tominov, N. I. Alyab'eva, M. V. Il'ina, V. V. Polyakova, Al. V. Bykov, O. A. Ageev, “Atomic force microscopy measurement of the resistivity of semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018), 1273–1278; Tech. Phys., 63:8 (2018), 1236–1241
Citation in format AMSBIB
\Bibitem{SmiTomAly18}
\by V.~A.~Smirnov, R.~V.~Tominov, N.~I.~Alyab'eva, M.~V.~Il'ina, V.~V.~Polyakova, Al.~V.~Bykov, O.~A.~Ageev
\paper Atomic force microscopy measurement of the resistivity of semiconductors
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 88
\issue 8
\pages 1273--1278
\mathnet{http://mi.mathnet.ru/jtf5852}
\crossref{https://doi.org/10.21883/JTF.2018.08.46320.2351}
\elib{https://elibrary.ru/item.asp?id=35269901}
\transl
\jour Tech. Phys.
\yr 2018
\vol 63
\issue 8
\pages 1236--1241
\crossref{https://doi.org/10.1134/S1063784218080182}
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    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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