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This article is cited in 2 scientific papers (total in 2 papers)
Physical electronics
Atomic layer deposition of thin films onto 3$D$ nanostructures: the effect of wall tilt angle and aspect ratio of trenches
A. V. Fadeev, K. V. Rudenko Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow
Abstract:
A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality of trench walls and the dynamic variation of the aspect ratio of the structure in the process of film growth in nanosized trenches are considered in this model. The dependence of the resulting film thickness and conformity on ALD process parameters is studied theoretically.
Keywords:
Atomic Layer Deposition (ALD), Tilt Walls, Trench Wall, Initial Tilt Angle, Particle Reflection.
Received: 10.11.2017
Citation:
A. V. Fadeev, K. V. Rudenko, “Atomic layer deposition of thin films onto 3$D$ nanostructures: the effect of wall tilt angle and aspect ratio of trenches”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1573–1580; Tech. Phys., 63:10 (2018), 1525–1532
Linking options:
https://www.mathnet.ru/eng/jtf5803 https://www.mathnet.ru/eng/jtf/v88/i10/p1573
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Abstract page: | 32 | Full-text PDF : | 17 |
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