Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 12, Pages 1912–1915
DOI: https://doi.org/10.21883/JTF.2018.12.46798.68-18
(Mi jtf5758)
 

This article is cited in 18 scientific papers (total in 18 papers)

Physical electronics

Numerical analysis of electron runaway in the presence of enhanced field in the vicinity of a microtip

V. V. Lisenkovab, S. N. Ivanovb, Yu. I. Mamontova, I. N. Tikhonova

a Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
b Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Ekaterinburg
Abstract: Transition of field-emission electrons to the runaway regime in the region of enhanced electric field determined by the configuration of a microtip on a cathode is studied at several pressures of gas medium. The problem is solved using simulation of electron motion in the presence of nonuniform electric field with the aid of the Monte Carlo procedure in the 2D configuration. Nitrogen is used as a working gas. Passage through a relatively small region of the enhanced field in the vicinity of the microtip may substantially facilitate electron escape to the runaway regime, especially, at pressures of greater than 10 atm. In our opinion, the resulting runaway electrons may provide preionization of gas medium and formation of the initial stage of a 3D discharge.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-00894
Received: 13.02.2018
English version:
Technical Physics, 2018, Volume 63, Issue 12, Pages 1872–1875
DOI: https://doi.org/10.1134/S1063784218120095
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Lisenkov, S. N. Ivanov, Yu. I. Mamontov, I. N. Tikhonov, “Numerical analysis of electron runaway in the presence of enhanced field in the vicinity of a microtip”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1912–1915; Tech. Phys., 63:12 (2018), 1872–1875
Citation in format AMSBIB
\Bibitem{LisIvaMam18}
\by V.~V.~Lisenkov, S.~N.~Ivanov, Yu.~I.~Mamontov, I.~N.~Tikhonov
\paper Numerical analysis of electron runaway in the presence of enhanced field in the vicinity of a microtip
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 88
\issue 12
\pages 1912--1915
\mathnet{http://mi.mathnet.ru/jtf5758}
\crossref{https://doi.org/10.21883/JTF.2018.12.46798.68-18}
\elib{https://elibrary.ru/item.asp?id=36929272}
\transl
\jour Tech. Phys.
\yr 2018
\vol 63
\issue 12
\pages 1872--1875
\crossref{https://doi.org/10.1134/S1063784218120095}
Linking options:
  • https://www.mathnet.ru/eng/jtf5758
  • https://www.mathnet.ru/eng/jtf/v88/i12/p1912
  • This publication is cited in the following 18 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024