Thermal surface interface for high-power arsenide–gallium heterostructure fets

Application of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of additional efforts aimed at a decrease in the thermal resistance of the substrate, the application of an additional thermal interface that represents a heat-conducting dielectric coating makes it possible to substantially decrease the overheating of the transistor channel. A several-fold decrease in such overheating can be reached using variations in the thickness of the coating and modification of the transistor structure and working regimes.