Numerical and experimental study of an optimized $p$-SOS diode

We report on the results of experimental investigation and numerical simulation of switching of SOS diode with $p^{+}P_{0}n^{+}$ structure and with reduced thickness of $P_0$-base. The proposed 1D diffusion-drift model of electron–hole plasma dynamics is found to be in good agreement with the experiment. The reduction of the $P_0$-base thickness has allowed us to double the output pulse voltage with the same switching current density. This has been reached by a considerable reduction of switching losses as well as due to the formation of the domain of a strong quasi-rectangular electric field at the $P_{0}n^{+}$ junction during the current interruption. As a result, output pulse amplitude considerably exceeds the static breakdown voltage of $P_{0}n^{+}$ junction. This effect has been observed for the first time for high-voltage semiconductor opening switches.