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This article is cited in 3 scientific papers (total in 3 papers)
Physical electronics
Model for thermal oxidation of silicon
A. V. Fadeeva, Yu. N. Devyatkob a Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
Abstract:
Nanometer-thick silicon oxide films are needed for miniaturization and increase in the working rate of electronic devices. Interpretation of the initial stages of silicon oxidation is necessary for fabrication of such structures. A theoretical model of the thermal oxidation of thin silicon monolayers that takes into account an increase in the stress in the transition (oxide–substrate) layer due to oxygen accumulation therein is proposed.
Received: 26.04.2018 Revised: 28.09.2018
Citation:
A. V. Fadeev, Yu. N. Devyatko, “Model for thermal oxidation of silicon”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 620–626; Tech. Phys., 64:4 (2019), 575–581
Linking options:
https://www.mathnet.ru/eng/jtf5653 https://www.mathnet.ru/eng/jtf/v89/i4/p620
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Abstract page: | 62 | Full-text PDF : | 24 |
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