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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 4, Pages 599–602
DOI: https://doi.org/10.21883/JTF.2019.04.47319.110-18
(Mi jtf5649)
 

Solid-State Electronics

Conductivity inversion in thin $n$-InSe films under laser irradiation

A. G. Kyazim-zadea, V. M. Salmanova, A. H. Huseynova, R. M. Mamedova, Z. A. Aghamaliyeva, A. A. Salmanovab, F. M. Akhmedovaa

a Baku State University
b Azerbaijan State University of Oil and Industry, Baku
Abstract: Conductivity inversion in thin $n$-InSe films under intense pulsed laser irradiation was obser. A $p$$n$ structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.
Received: 14.03.2018
Revised: 10.05.2018
English version:
Technical Physics, 2019, Volume 64, Issue 4, Pages 555–558
DOI: https://doi.org/10.1134/S1063784219040145
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Kyazim-zade, V. M. Salmanov, A. H. Huseynov, R. M. Mamedov, Z. A. Aghamaliyev, A. A. Salmanova, F. M. Akhmedova, “Conductivity inversion in thin $n$-InSe films under laser irradiation”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 599–602; Tech. Phys., 64:4 (2019), 555–558
Citation in format AMSBIB
\Bibitem{KyaSalHus19}
\by A.~G.~Kyazim-zade, V.~M.~Salmanov, A.~H.~Huseynov, R.~M.~Mamedov, Z.~A.~Aghamaliyev, A.~A.~Salmanova, F.~M.~Akhmedova
\paper Conductivity inversion in thin $n$-InSe films under laser irradiation
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 4
\pages 599--602
\mathnet{http://mi.mathnet.ru/jtf5649}
\crossref{https://doi.org/10.21883/JTF.2019.04.47319.110-18}
\elib{https://elibrary.ru/item.asp?id=37643958}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 4
\pages 555--558
\crossref{https://doi.org/10.1134/S1063784219040145}
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