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Solid-State Electronics
Conductivity inversion in thin $n$-InSe films under laser irradiation
A. G. Kyazim-zadea, V. M. Salmanova, A. H. Huseynova, R. M. Mamedova, Z. A. Aghamaliyeva, A. A. Salmanovab, F. M. Akhmedovaa a Baku State University
b Azerbaijan State University of Oil and Industry, Baku
Abstract:
Conductivity inversion in thin $n$-InSe films under intense pulsed laser irradiation was obser. A $p$–$n$ structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.
Received: 14.03.2018 Revised: 10.05.2018
Citation:
A. G. Kyazim-zade, V. M. Salmanov, A. H. Huseynov, R. M. Mamedov, Z. A. Aghamaliyev, A. A. Salmanova, F. M. Akhmedova, “Conductivity inversion in thin $n$-InSe films under laser irradiation”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 599–602; Tech. Phys., 64:4 (2019), 555–558
Linking options:
https://www.mathnet.ru/eng/jtf5649 https://www.mathnet.ru/eng/jtf/v89/i4/p599
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Abstract page: | 56 | Full-text PDF : | 10 |
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