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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 8, Pages 1276–1281
DOI: https://doi.org/10.21883/JTF.2019.08.47904.264-18 (Mi jtf5549) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Physical electronics

Charging of ion-implanted dielectrics by electron irradiation

E. I. Rauab, A. A. Tatarintsevb, E. Yu. Zykovab, S. V. Zaitsevb

a Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia
b Lomonosov Moscow State University
Full-text PDF (350 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2019.08.47904.264-18
Abstract: The charging kinetics of Al$_2$O$_3$ (sapphire) and SiO$_2$ ($\alpha$-quartz) dielectrics irradiated by inert gas ions (Ar$^+$), metal ions (Ga$^+$), and protons (H$^+$) has been studied. It has been found that charging kinetics depends considerably on the type of irradiating ion. Also, it has been established that preirradiation of a dielectric target by an ionizing corpuscular radiation (protons, ions) substantially changes the charge characteristics of the dielectric surface. These differences depend on irradiating ion energy, which governs the depth of an accumulated negative charge layer versus the depth of ion preimplantation.
Funding agency Grant number
Russian Foundation for Basic Research 18-02-00813А
This study was supported by the Russian Foundation for Basic Research, grant no. 18-02-00813A.
Received: 05.07.2018
Revised: 05.07.2018
Accepted: 20.02.2019
English version:
Technical Physics, 2019, Volume 64, Issue 8, Pages 1205–1209
DOI: https://doi.org/10.1134/S1063784219080188
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. I. Rau, A. A. Tatarintsev, E. Yu. Zykova, S. V. Zaitsev, “Charging of ion-implanted dielectrics by electron irradiation”, Zhurnal Tekhnicheskoi Fiziki, 89:8 (2019), 1276–1281; Tech. Phys., 64:8 (2019), 1205–1209
Citation in format AMSBIB
\Bibitem{RauTatZyk19}
\by E.~I.~Rau, A.~A.~Tatarintsev, E.~Yu.~Zykova, S.~V.~Zaitsev
\paper Charging of ion-implanted dielectrics by electron irradiation
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 8
\pages 1276--1281
\mathnet{http://mi.mathnet.ru/jtf5549}
\crossref{https://doi.org/10.21883/JTF.2019.08.47904.264-18}
\elib{https://elibrary.ru/item.asp?id=41130886}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 8
\pages 1205--1209
\crossref{https://doi.org/10.1134/S1063784219080188}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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