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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 10, Pages 1592–1597
DOI: https://doi.org/10.21883/JTF.2019.10.48178.412-18 (Mi jtf5499) 		 
Physics of nanostructures

Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers

R. V. Levina, B. V. Pushniia, I. V. Fedorovab, A. A. Usikovaa, V. N. Nevedomskiya, N. L. Bazhenova, K. J. Mynbaevab, N. V. Pavlova, G. G. Zegryaa

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (757 kB)
DOI: https://doi.org/10.21883/JTF.2019.10.48178.412-18
Abstract: The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission electron microscopy and methods of photo- and electroluminescence. It was found that two GaInAsSb solid solutions of different compositions were formed in the active regions of structures in the given growth conditions. The fabricated system was characterized by an emission wavelength of 4.96 $\mu$m at a temperature of 77 K. The results reveal new opportunities for bandgap engineering of semiconductor structures based on InAs/GaSb, which are designed for optoelectronic devices operating in the infrared range, provided by MOVPE.
Keywords: narrow-gap semiconductors, strained superlattice, MOCVD, electroluminescence.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-01130-a
Ministry of Education and Science of the Russian Federation RFMEFI62117X0018
This study was supported in part by the Russian Foundation for Basic Research, grant no. 16-08-01130-a.
Received: 29.11.2018
Revised: 29.11.2018
Accepted: 10.04.2019
English version:
Technical Physics, 2019, Volume 64, Issue 10, Pages 1509–1514
DOI: https://doi.org/10.1134/S106378421910013X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Levin, B. V. Pushnii, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskiy, N. L. Bazhenov, K. J. Mynbaev, N. V. Pavlov, G. G. Zegrya, “Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1592–1597; Tech. Phys., 64:10 (2019), 1509–1514
Citation in format AMSBIB
\Bibitem{LevPusFed19}
\by R.~V.~Levin, B.~V.~Pushnii, I.~V.~Fedorov, A.~A.~Usikova, V.~N.~Nevedomskiy, N.~L.~Bazhenov, K.~J.~Mynbaev, N.~V.~Pavlov, G.~G.~Zegrya
\paper Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 10
\pages 1592--1597
\mathnet{http://mi.mathnet.ru/jtf5499}
\crossref{https://doi.org/10.21883/JTF.2019.10.48178.412-18}
\elib{https://elibrary.ru/item.asp?id=41174993}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 10
\pages 1509--1514
\crossref{https://doi.org/10.1134/S106378421910013X}
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