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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 11, Pages 1732–1735
DOI: https://doi.org/10.21883/JTF.2019.11.48336.122-19 (Mi jtf5466) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XXIII International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 11-14, 2019

Tunnel ìagnetoresistive ålements for magnetic field sensors

I. Yu. Pashen'kina, M. V. Sapozhnikovab, N. S. Guseva, V. V. Rogova, D. A. Tatarskiiab, A. A. Fraermana

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (229 kB) Citations (5)
DOI: https://doi.org/10.21883/JTF.2019.11.48336.122-19
Abstract: We have developed technology for manufacturing chains of CoFe/Al$_{2}$O$_{3}$/NiFe tunnel magnetoresistive (TMR) elements with pinning on the IrMn antiferromagnetic layer. We have studied the dependence of the shape of magnetoresistance curves on the geometric parameters of laterally bounded TMR contacts, as well as on the mutual orientation of the external magnetic field and the axis of unidirectional anisotropy of the pinned CoFe layer. The chain resistance ranges from several tens of kiloohms to hundreds of megaohms depending on the thickness of the tunnel-transparent dielectric layer with a magnetoresistive effect of 10–15%. The developed technology can be used in manufacturing tunneling magnetic field sensors.
Keywords: tunnel magnetoresistive contacts, unidirectional anisotropy, magnetron sputtering, optical lithography, ion etching.
Funding agency Grant number
Russian Foundation for Basic Research 18-02-00247
Russian Science Foundation 16-12-10340
Developing the technology for manufacturing tunnel magnitoresistive structures and studying their magnetic properties was supported by the Russian Foundation for Basic Research (project no. 18-02-00247). Investigations of the transportation and magnetoelectric properties of chains of tunnel contacts was supported by the Russian Science Foundation (project 16-12-10340).
Received: 28.03.2019
Revised: 28.03.2019
Accepted: 15.04.2019
English version:
Technical Physics, 2019, Volume 64, Issue 11, Pages 1642–1645
DOI: https://doi.org/10.1134/S1063784219110227
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. Yu. Pashen'kin, M. V. Sapozhnikov, N. S. Gusev, V. V. Rogov, D. A. Tatarskii, A. A. Fraerman, “Tunnel ìagnetoresistive ålements for magnetic field sensors”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1732–1735; Tech. Phys., 64:11 (2019), 1642–1645
Citation in format AMSBIB
\Bibitem{PasSapGus19}
\by I.~Yu.~Pashen'kin, M.~V.~Sapozhnikov, N.~S.~Gusev, V.~V.~Rogov, D.~A.~Tatarskii, A.~A.~Fraerman
\paper Tunnel ìagnetoresistive ålements for magnetic field sensors
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 11
\pages 1732--1735
\mathnet{http://mi.mathnet.ru/jtf5466}
\crossref{https://doi.org/10.21883/JTF.2019.11.48336.122-19}
\elib{https://elibrary.ru/item.asp?id=41300866}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 11
\pages 1642--1645
\crossref{https://doi.org/10.1134/S1063784219110227}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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